Device quality InOx:Sn and InOx thin films deposited at room temperature with different rf-power densities
Identifieur interne : 001E34 ( Main/Repository ); précédent : 001E33; suivant : 001E35Device quality InOx:Sn and InOx thin films deposited at room temperature with different rf-power densities
Auteurs : RBID : Pascal:13-0131769Descripteurs français
- Pascal (Inist)
- Couche mince, Dépendance température, Effet température, Relation composition propriété, Dépôt phase vapeur, Propriété transport, Dopage, Addition étain, Addition indium, Transparence, Résistivité électrique, Facteur transmission, Analyse surface, Morphologie surface, Nitrure de titane, Oxyde d'indium, Oxyde d'étain, Etain alliage, Structure surface, Etat surface, Rugosité, Grosseur grain, Condition opératoire, 8115K, 6855J, 6855A, 8115A.
- Wicri :
- concept : Dopage.
English descriptors
- KwdEn :
- Doping, Electric resistivity, Grain size, Indium additions, Indium oxide, Operating conditions, Property composition relationship, Roughness, Surface analysis, Surface morphology, Surface states, Surface structure, Temperature dependence, Temperature effects, Thin films, Tin additions, Tin alloys, Tin oxide, Titanium nitride, Transmittance, Transparency, Transport properties, Vapor deposition.
Abstract
The influence of tin doping on the electrical, optical, structural and morphological properties of indium oxide films produced by radio-frequency plasma enhanced reactive thermal evaporation is studied, as transport properties are expected to improve with doping. Undoped and tin doped indium oxide thin films are deposited at room temperature using both pure In rods and (95-80) % In:(5-20) % Sn alloys as evaporation sources and 19.5 mW/cm2 and 58.6 mW/cm2 as rf-power densities. The two most important macroscopic properties - visible transparency and electrical resistivity - are relatively independent of tin content (0-20%). Visible transmittance of about 75% and electrical resistivity around 5×10-4 Ω.cm can be observed in the films. The structural features are similar for all samples. Nevertheless, the surface morphology characterization shows that the homogeneity of the films varies according to the tin content. Moreover this variation is a balance between the rf-power and the tin content in the alloy: i) films with small and compact grains are produced at 58.6 mW/cm2 from a 5% Sn alloy or at 19.5 mW/cm2 from a 15% Sn alloy and consequently, smooth surfaces with reduced roughness and similar grain size and shape are obtained: ii) films showing the presence of aggregates randomly distributed above a tissue formed of thinner grains and higher roughness are produced at the other deposition conditions.
Links toward previous steps (curation, corpus...)
- to stream Main, to step Corpus: 001034
Links to Exploration step
Pascal:13-0131769Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Device quality InO<sub>x</sub>:Sn and InO<sub>x</sub> thin films deposited at room temperature with different rf-power densities</title><author><name sortKey="Amaral, A" uniqKey="Amaral A">A. Amaral</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Dept. de Física and ICEMS, Instituto Superior Técnico/Universidade Técnica de Lisboa, Av. Rovisco Pais</s1><s2>1049-001 Lisboa</s2><s3>PRT</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country>Portugal</country><wicri:noRegion>1049-001 Lisboa</wicri:noRegion></affiliation></author><author><name sortKey="Brogueira, P" uniqKey="Brogueira P">P. Brogueira</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Dept. de Física and ICEMS, Instituto Superior Técnico/Universidade Técnica de Lisboa, Av. Rovisco Pais</s1><s2>1049-001 Lisboa</s2><s3>PRT</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country>Portugal</country><wicri:noRegion>1049-001 Lisboa</wicri:noRegion></affiliation></author><author><name sortKey="Conde, O" uniqKey="Conde O">O. Conde</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Universidade de Lisboa, Dept. de Física and ICEMS, Campo Grande</s1><s2>1749-016 Lisboa</s2><s3>PRT</s3><sZ>3 aut.</sZ></inist:fA14><country>Portugal</country><wicri:noRegion>1749-016 Lisboa</wicri:noRegion></affiliation></author><author><name sortKey="Lavareda, G" uniqKey="Lavareda G">G. Lavareda</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Dept. de Ciência dos Materiais and CTS, FCT-UNL</s1><s2>2829-516 Caparica</s2><s3>PRT</s3><sZ>4 aut.</sZ></inist:fA14><country>Portugal</country><wicri:noRegion>2829-516 Caparica</wicri:noRegion></affiliation></author><author><name sortKey="Nunes De Carvalho, C" uniqKey="Nunes De Carvalho C">C. Nunes De Carvalho</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Dept. de Ciência dos Materiais, FCT-UNL and ICEMS</s1><s2>2829-516 Caparica</s2><s3>PRT</s3><sZ>5 aut.</sZ></inist:fA14><country>Portugal</country><wicri:noRegion>2829-516 Caparica</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0131769</idno><date when="2012">2012</date><idno type="stanalyst">PASCAL 13-0131769 INIST</idno><idno type="RBID">Pascal:13-0131769</idno><idno type="wicri:Area/Main/Corpus">001034</idno><idno type="wicri:Area/Main/Repository">001E34</idno></publicationStmt><seriesStmt><idno type="ISSN">0040-6090</idno><title level="j" type="abbreviated">Thin solid films</title><title level="j" type="main">Thin solid films</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Doping</term><term>Electric resistivity</term><term>Grain size</term><term>Indium additions</term><term>Indium oxide</term><term>Operating conditions</term><term>Property composition relationship</term><term>Roughness</term><term>Surface analysis</term><term>Surface morphology</term><term>Surface states</term><term>Surface structure</term><term>Temperature dependence</term><term>Temperature effects</term><term>Thin films</term><term>Tin additions</term><term>Tin alloys</term><term>Tin oxide</term><term>Titanium nitride</term><term>Transmittance</term><term>Transparency</term><term>Transport properties</term><term>Vapor deposition</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Couche mince</term><term>Dépendance température</term><term>Effet température</term><term>Relation composition propriété</term><term>Dépôt phase vapeur</term><term>Propriété transport</term><term>Dopage</term><term>Addition étain</term><term>Addition indium</term><term>Transparence</term><term>Résistivité électrique</term><term>Facteur transmission</term><term>Analyse surface</term><term>Morphologie surface</term><term>Nitrure de titane</term><term>Oxyde d'indium</term><term>Oxyde d'étain</term><term>Etain alliage</term><term>Structure surface</term><term>Etat surface</term><term>Rugosité</term><term>Grosseur grain</term><term>Condition opératoire</term><term>8115K</term><term>6855J</term><term>6855A</term><term>8115A</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Dopage</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The influence of tin doping on the electrical, optical, structural and morphological properties of indium oxide films produced by radio-frequency plasma enhanced reactive thermal evaporation is studied, as transport properties are expected to improve with doping. Undoped and tin doped indium oxide thin films are deposited at room temperature using both pure In rods and (95-80) % In:(5-20) % Sn alloys as evaporation sources and 19.5 mW/cm<sup>2</sup> and 58.6 mW/cm<sup>2</sup> as rf-power densities. The two most important macroscopic properties - visible transparency and electrical resistivity - are relatively independent of tin content (0-20%). Visible transmittance of about 75% and electrical resistivity around 5×10<sup>-4</sup> Ω.cm can be observed in the films. The structural features are similar for all samples. Nevertheless, the surface morphology characterization shows that the homogeneity of the films varies according to the tin content. Moreover this variation is a balance between the rf-power and the tin content in the alloy: i) films with small and compact grains are produced at 58.6 mW/cm<sup>2</sup> from a 5% Sn alloy or at 19.5 mW/cm<sup>2</sup> from a 15% Sn alloy and consequently, smooth surfaces with reduced roughness and similar grain size and shape are obtained: ii) films showing the presence of aggregates randomly distributed above a tissue formed of thinner grains and higher roughness are produced at the other deposition conditions.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0040-6090</s0></fA01><fA02 i1="01"><s0>THSFAP</s0></fA02><fA03 i2="1"><s0>Thin solid films</s0></fA03><fA05><s2>526</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>Device quality InO<sub>x</sub>:Sn and InO<sub>x</sub> thin films deposited at room temperature with different rf-power densities</s1></fA08><fA11 i1="01" i2="1"><s1>AMARAL (A.)</s1></fA11><fA11 i1="02" i2="1"><s1>BROGUEIRA (P.)</s1></fA11><fA11 i1="03" i2="1"><s1>CONDE (O.)</s1></fA11><fA11 i1="04" i2="1"><s1>LAVAREDA (G.)</s1></fA11><fA11 i1="05" i2="1"><s1>NUNES DE CARVALHO (C.)</s1></fA11><fA14 i1="01"><s1>Dept. de Física and ICEMS, Instituto Superior Técnico/Universidade Técnica de Lisboa, Av. Rovisco Pais</s1><s2>1049-001 Lisboa</s2><s3>PRT</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></fA14><fA14 i1="02"><s1>Universidade de Lisboa, Dept. de Física and ICEMS, Campo Grande</s1><s2>1749-016 Lisboa</s2><s3>PRT</s3><sZ>3 aut.</sZ></fA14><fA14 i1="03"><s1>Dept. de Ciência dos Materiais and CTS, FCT-UNL</s1><s2>2829-516 Caparica</s2><s3>PRT</s3><sZ>4 aut.</sZ></fA14><fA14 i1="04"><s1>Dept. de Ciência dos Materiais, FCT-UNL and ICEMS</s1><s2>2829-516 Caparica</s2><s3>PRT</s3><sZ>5 aut.</sZ></fA14><fA20><s1>221-224</s1></fA20><fA21><s1>2012</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>13597</s2><s5>354000503719890360</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>18 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0131769</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Thin solid films</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>The influence of tin doping on the electrical, optical, structural and morphological properties of indium oxide films produced by radio-frequency plasma enhanced reactive thermal evaporation is studied, as transport properties are expected to improve with doping. Undoped and tin doped indium oxide thin films are deposited at room temperature using both pure In rods and (95-80) % In:(5-20) % Sn alloys as evaporation sources and 19.5 mW/cm<sup>2</sup> and 58.6 mW/cm<sup>2</sup> as rf-power densities. The two most important macroscopic properties - visible transparency and electrical resistivity - are relatively independent of tin content (0-20%). Visible transmittance of about 75% and electrical resistivity around 5×10<sup>-4</sup> Ω.cm can be observed in the films. The structural features are similar for all samples. Nevertheless, the surface morphology characterization shows that the homogeneity of the films varies according to the tin content. Moreover this variation is a balance between the rf-power and the tin content in the alloy: i) films with small and compact grains are produced at 58.6 mW/cm<sup>2</sup> from a 5% Sn alloy or at 19.5 mW/cm<sup>2</sup> from a 15% Sn alloy and consequently, smooth surfaces with reduced roughness and similar grain size and shape are obtained: ii) films showing the presence of aggregates randomly distributed above a tissue formed of thinner grains and higher roughness are produced at the other deposition conditions.</s0></fC01><fC02 i1="01" i2="3"><s0>001B80A15K</s0></fC02><fC02 i1="02" i2="3"><s0>001B60H55J</s0></fC02><fC02 i1="03" i2="3"><s0>001B60A16</s0></fC02><fC02 i1="04" i2="3"><s0>001B80A15A</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Couche mince</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Thin films</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Dépendance température</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Temperature dependence</s0><s5>02</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Effet température</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Temperature effects</s0><s5>03</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Relation composition propriété</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>Property composition relationship</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="SPA"><s0>Relación composición propiedad</s0><s5>04</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Dépôt phase vapeur</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Vapor deposition</s0><s5>05</s5></fC03><fC03 i1="06" i2="X" l="FRE"><s0>Propriété transport</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="ENG"><s0>Transport properties</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="SPA"><s0>Propiedad transporte</s0><s5>06</s5></fC03><fC03 i1="07" i2="X" l="FRE"><s0>Dopage</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="ENG"><s0>Doping</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="SPA"><s0>Doping</s0><s5>07</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Addition étain</s0><s5>08</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Tin additions</s0><s5>08</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Addition indium</s0><s5>09</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Indium additions</s0><s5>09</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Transparence</s0><s5>10</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Transparency</s0><s5>10</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Résistivité électrique</s0><s5>11</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Electric resistivity</s0><s5>11</s5></fC03><fC03 i1="12" i2="X" l="FRE"><s0>Facteur transmission</s0><s5>12</s5></fC03><fC03 i1="12" i2="X" l="ENG"><s0>Transmittance</s0><s5>12</s5></fC03><fC03 i1="12" i2="X" l="SPA"><s0>Factor transmisión</s0><s5>12</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Analyse surface</s0><s5>13</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Surface analysis</s0><s5>13</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Morphologie surface</s0><s5>14</s5></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Surface morphology</s0><s5>14</s5></fC03><fC03 i1="15" i2="X" l="FRE"><s0>Nitrure de titane</s0><s5>15</s5></fC03><fC03 i1="15" i2="X" l="ENG"><s0>Titanium nitride</s0><s5>15</s5></fC03><fC03 i1="15" i2="X" l="SPA"><s0>Titanio nitruro</s0><s5>15</s5></fC03><fC03 i1="16" i2="X" l="FRE"><s0>Oxyde d'indium</s0><s5>16</s5></fC03><fC03 i1="16" i2="X" l="ENG"><s0>Indium oxide</s0><s5>16</s5></fC03><fC03 i1="16" i2="X" l="SPA"><s0>Indio óxido</s0><s5>16</s5></fC03><fC03 i1="17" i2="X" l="FRE"><s0>Oxyde d'étain</s0><s5>17</s5></fC03><fC03 i1="17" i2="X" l="ENG"><s0>Tin oxide</s0><s5>17</s5></fC03><fC03 i1="17" i2="X" l="SPA"><s0>Estaño óxido</s0><s5>17</s5></fC03><fC03 i1="18" i2="3" l="FRE"><s0>Etain alliage</s0><s5>18</s5></fC03><fC03 i1="18" i2="3" l="ENG"><s0>Tin alloys</s0><s5>18</s5></fC03><fC03 i1="19" i2="3" l="FRE"><s0>Structure surface</s0><s5>29</s5></fC03><fC03 i1="19" i2="3" l="ENG"><s0>Surface structure</s0><s5>29</s5></fC03><fC03 i1="20" i2="3" l="FRE"><s0>Etat surface</s0><s5>30</s5></fC03><fC03 i1="20" i2="3" l="ENG"><s0>Surface states</s0><s5>30</s5></fC03><fC03 i1="21" i2="3" l="FRE"><s0>Rugosité</s0><s5>31</s5></fC03><fC03 i1="21" i2="3" l="ENG"><s0>Roughness</s0><s5>31</s5></fC03><fC03 i1="22" i2="3" l="FRE"><s0>Grosseur grain</s0><s5>32</s5></fC03><fC03 i1="22" i2="3" l="ENG"><s0>Grain size</s0><s5>32</s5></fC03><fC03 i1="23" i2="X" l="FRE"><s0>Condition opératoire</s0><s5>33</s5></fC03><fC03 i1="23" i2="X" l="ENG"><s0>Operating conditions</s0><s5>33</s5></fC03><fC03 i1="23" i2="X" l="SPA"><s0>Condición operatoria</s0><s5>33</s5></fC03><fC03 i1="24" i2="3" l="FRE"><s0>8115K</s0><s4>INC</s4><s5>71</s5></fC03><fC03 i1="25" i2="3" l="FRE"><s0>6855J</s0><s4>INC</s4><s5>72</s5></fC03><fC03 i1="26" i2="3" l="FRE"><s0>6855A</s0><s4>INC</s4><s5>73</s5></fC03><fC03 i1="27" i2="3" l="FRE"><s0>8115A</s0><s4>INC</s4><s5>74</s5></fC03><fN21><s1>105</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
EXPLOR_STEP=IndiumV3/Data/Main/Repository
HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 001E34 | SxmlIndent | more
Ou
HfdSelect -h $EXPLOR_AREA/Data/Main/Repository/biblio.hfd -nk 001E34 | SxmlIndent | more
Pour mettre un lien sur cette page dans le réseau Wicri
{{Explor lien
|wiki= *** parameter Area/wikiCode missing ***
|area= IndiumV3
|flux= Main
|étape= Repository
|type= RBID
|clé= Pascal:13-0131769
|texte= Device quality InOx:Sn and InOx thin films deposited at room temperature with different rf-power densities
}}
| This area was generated with Dilib version V0.5.77. |  |